HS Code 85423269 - Flash E²PROMs over 512 Mbit

Electronic integrated circuits as electrically erasable, programmable read-only memories "flash E²PROMs", with a storage capacity of > 512 Mbit (excl. in the form of multichip or multi-component integrated circuits)

Examples (No official information or warranty)

- 1024 Mbit capacity flash memory chip in a 48-pin TSOP package
- 2048 Mbit flash memory module in a 144-ball BGA package
- 4096 Mbit flash storage device in a 201-pin MicroDIMM package
- 8192 Mbit high-speed flash memory component in a 240-pin LGA package

Code Tree Structure / Hierarchy

    8542 Electronic integrated circuits Electronic integrated circuits 854232 Memories Goods specified in note 12(b)(3 and 4) to this chapter Other Dynamic random-access memories (D-RAMs) Electrically erasable, programmable, read only memories (E²PROMs), including flash E²PROMs Flash E²PROMs 85423261 With a storage capacity not exceeding 512 Mbits 85423269 With a storage capacity exceeding 512 Mbits

Trade restrictions and policies

Chapter 85
45 Trade restrictions and policies
Position 8542
6 Trade restrictions and policies
Subheading 854232
5 Trade restrictions and policies
Customs Tariff Number 85423269
2008-01-01
ERGA OMNES (1011)
Supplementary unit
Regulation 1549/06
2017-09-01
North Korea (Democratic People’s Republic of Korea) (KP)
Import control on restricted goods and technologies
Regulation 1509/17
2017-10-23
Iran, Islamic Republic of (IR)
Import control on restricted goods and technologies
Regulation 0267/12
2008-01-01
ERGA OMNES (1011)
Supplementary unit
Regulation 1549/06
2017-09-01
North Korea (Democratic People’s Republic of Korea) (KP)
Export control on restricted goods and technologies
Regulation 1509/17
2017-10-23
Iran, Islamic Republic of (IR)
Restriction on export
Regulation 0267/12
2024-11-08
All third countries (1008)
Export authorization (Dual use)
Regulation 2547/24

Changes to this tariff number

Changes in favor of 85423269
2006: 85422137
2007: 85423269